Defeating the purpose of U.S. restrictions of exports to China of its top-of-the-line semiconductor production technology, the Chinese apparently have leapfrogged that technology. From Hua Bin at unz.com:
Despite the obvious hype, there is no doubt AI and semiconductors are key drivers of scientific and technological progress for the world for decades to come.
As silicon-based chips shrink toward their physical limits, the industry is desperately searching for alternatives to continue the progress defined by Moore’s Law — the trend that Intel co-founder Gordon Moore identified in 1965, predicting transistor counts would double roughly every two years with minimal cost increases.
New materials are being explored to replace the Silicon on which the semiconductors of today are built.
Photonic chip, using photon (particles of light) for data processing and transfer, is one option. Another option is to use the wide bandgap materials such as Gallium Nitride (GaN), Silicon Carbide (SiC), and Indium Selenide (InSe) to replace Silicon to process and transfer data faster and more efficiently – these are called third generation semiconductors.
Similar to Silicon, third generation semiconductors use electron for data processing but due to their physical properties, they are able to deliver higher performance with lower energy consumption. Many of the processing technologies used in silicon chip production can be used for the production of the third generation chips.
China has invested heavily in both photonic and third generation semiconductors, especially since the US tech embargo has affected its ability to build leading edge Silicon chips.
Its progress in Gallium Nitride (GaN) based semiconductor manufacturing has enabled Beijing to lead the world in military radar technology. https://huabinoliver.substack.com/p/chinas-rare-earth-ban-is-widening
Among third generation materials, Indium Selenide (InSe) has long been called the “golden semiconductor” as it offers an ideal combination of properties—low effective mass, high electron mobility, high thermal velocity, suitable bandgap for transistors, and a profile that can be ultrathin.
However, its wafer-scale integration has remained elusive due to the difficulty of precisely maintaining a 1:1 atomic ratio between indium and selenium during synthesis (called crystal growth). Traditional methods have only yielded microscopic flakes, insufficient for practical electronic applications.
That world lead in rare earth minerals should come in handy.
What is available in house can’t be tariffed.
1945 is over and you chose poorly with OSS state in 1947.
Rothschildlandia (Israel) came online one year later.
Reading about first responders to the Oreshnik strike last fall finding “mini volcanoes” with molten material before the sight was locked down.
Rare materials were used in the building of the Hazelnut.
We will have hypersonic and high speed rail one day?
Duh, winning.
Who is Hua Bin? Aka Oliver71 on his substack.
Who hides being this pseudo?
CCP agent in charge of some of their propaganda in the west?